● Damage due to cell rupture during manufacturing, transportation, installation, or resulting from other external influences, e.g., hail
● Defective bypass diodes or their failures arising (for example from overvoltage, thermal runaway, wear or moisture penetrating the junction box)
● PID – potential-induced degradation, which leads to a gradual decline in the performance of the affected modules
● Corrosion
● String and cell failures
Up to now, modules had to be examined in the laboratory to detect the above-mentioned damage and defects. This method entails significant costs and risks from dismantling, transportation to the laboratory and back, and final reassembly.
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